titanium silicide
英
美
网络 硅化钛; 钛硅化物
双语例句
- Investigation of phase change and growth kinetics of titanium silicide on silicon
硅上硅化钛相变和生长动力学研究 - A double-layer polysilicon bipolar technology is presented. Deep-trench isolation and BF_2-implanted base layer, combined with rapid thermal annealing ( RTA), are used in the process for emitter diffusion and titanium silicide annealing.
报道了一种使用深槽隔离和注入基区及快速热退火（RTA），同时为发射极扩散和Ti硅化物退火的双层多晶硅双极技术。 - Raman Scattering of Refractory Metal Titanium Silicide
难熔金属硅化物的喇曼散射 - The Influence of Gas Mixture Ratio on the Properties of Titanium Silicide Films Formed by PECVD
气体流量比对PECVD硅化钛薄膜性质的影响 - A Self-Aligned MOSFET Technology with As Ion Implantation Into Titanium Silicide
As离子注入硅化钛自对准MOS器件技术研究 - In this paper, the titanium silicide films processed by PECVD method have been studied.
本文研究了用PECVD法制备硅化钛膜的卫艺。 - Titanium Silicide Formed by Means of Ion Mixing
用离子束混合形成硅化钛 - The Titanium silicide film has its potential advantage in forming a gate electrode and interconnection for VLSI because of its low resistivity and some other good characteristics.
硅化钛薄膜由于电阻率低和其它一些良好特性，在VLSI的栅电极和互连线中显示出它潜在的优势。 - Titanium silicide thin film formation by nh_3 plasma asisted thermal annealing
NH3等离子体增强热处理形成硅化钛导电薄膜 - Titanium silicide has received great interests due to its low resistivity, high thermal and chemical stability as well as high compatibility with Si technology.
硅化钛具有低电阻率、较高的热稳定性以及化学稳定性等诸多优异的性能，且由于其可以与硅工艺兼容而具有重要的研究价值。